CRC 951 I: HIOS - All-epitaxial inorganic/organic semiconductor nanostructures (Project A5)

We search for epitaxy-like regimes in inorganic/organic semiconductor hybrid growth by employing the atomistic, electrostatic, and topological structure of the inorganic surface (ZnO, GaN). Goal is the generation of HIOS with properly defined interfaces, high structural order, and optimized design by using an all-UHV inorganic/organic tandem deposition apparatus. We aim at an in-depth understanding of the underlying growth mechanisms as well as the fabrication of functional heterostructures exhibiting efficient electronic, excitonic, and photonic coupling.